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Silicon Carbide Devices and Technology

ISBN

9781632384140

Publisher

NY Research Press

Language

English

Publication Year

2015

Category

Materials Science

Pages

410

Price

160 $

Description

This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC­) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.